IRG4PC50UD-EPBF Infineon Technologies IGBT Transistors V UltraFast 8- 60kHz datasheet, inventory, & pricing. IRG4PC50UD Transistor Datasheet, IRG4PC50UD Equivalent, PDF Data Sheets. IGBT. Parameters and Characteristics. Electronic Component Catalog. IRG4PC50UD datasheet, IRG4PC50UD circuit, IRG4PC50UD data sheet: IRF – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT.

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Diode Forward Voltage Drop. Junction-to-Ambient, typical socket mount. Diode Continuous Forward Current.

Ga te d rive a s spe cified. T Pulse width 5. Data and specifications subject to change without notice. Clamped Inductive Load Current R. Case-to-Sink, flat, greased surface. Generation 4 IGBT design provides tighter.

Diode Reverse Recovery Time. Mounting Torque, or M3 Screw. V CE on typ. Optimized for high operating.

IRG4PC50UD Datasheet PDF

Optimized for high operating. Tu rn -on lo sses inclu de. Gate ig4pc50ud Emitter Charge turn-on. Du ty c ycle: Diode Forward Voltage Drop. IGBT’s optimized for specific application conditions.

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Clamped Inductive Load Test. Soldering Temperature, for 10 sec. Diode Peak Reverse Recovery Current.

IRG4PC50UD IGBT. Datasheet pdf – Equivalent

Diode Peak Reverse Recovery Current. Total Gate Charge turn-on. Zero Irg44pc50ud Voltage Collector Current. Macro Waveforms for Figure 18a’s Test Circuit.

Measured 5mm from package. Junction-to-Ambient, typical socket mount. Gate – Collector Charge turn-on.

V CE daatsheet typ. Diode Peak Rate of Fall of Recovery. Pulsed Collector Current Q. Case-to-Sink, flat, greased surface. Industry standard TOAC package. Minimized recovery characteristics require. Tu rn -on lo sses inclu de.

Designed to be a “drop-in” replacement for equivalent. Zero Gate Voltage Collector Current. Clamped Inductive Load Current R. Ga te d rive a s spe cified. Macro Waveforms for Figure 18a’s Test Datashest. Mounting Torque, or M3 Screw.

Diode Reverse Recovery Time. Clamped Inductive Load Test. Diode Peak Rate of Fall of Recovery. T Pulse width 5. Q gTotal Gate Charge nC. T JJunction Temperature? Industry standard TOAC package. Soldering Temperature, for 10 sec. Energy losses include “tail” and. Generation 4 IGBT’s offer highest efficiencies.